收藏本站
SQ4410EY
www.vishay.com
Vishay Siliconix
Automotive N-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V DS (V)
R DS(on) ( ? ) at V GS = 10 V
R DS(on) ( ? ) at V GS = 4.5 V
I D (A)
Configuration
30
0.012
0.020
15
Single
FEATURES
? TrenchFET ? Power MOSFET
? AEC-Q101 Qualified
? 100 % R g and UIS Tested
? Material categorization: ?
For definitions of compliance please see
www.vishay.com/doc?99912
D
SO-8
S
1
8
D
S
S
G
2
3
4
7
6
5
D
D
D
G
S
Top View
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4410EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T C = 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
SYMBOL
V DS
V GS
LIMIT
30
± 20
UNIT
V
Continuous Drain Current
T C = 25 °C
T C = 125 °C
I D
15
9
Continuous Source Current (Diode Conduction)
Pulsed Drain Current a
I S
I DM
4.5
60
A
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
L = 0.1 mH
T C = 25 °C
T C = 125 °C
I AS
E AS
P D
T J , T stg
38
72
5
1.6
- 55 to + 175
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Junction-to-Ambient
Junction-to-Foot (Drain)
PCB
Mount b
R thJA
R thJF
90
30
°C/W
Notes
a. Pulse test; pulse width ? 300 μs, duty cycle ? 2 %.
b. When mounted on 1" square PCB (FR-4 material).
S12-2200-Rev. D, 24-Sep-12
1
Document Number: 65674
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SQ4470EY-T1-GE3 MOSFET N-CH 60V 16A 8SOIC
SQ4840EY-T1-GE3 MOSFET N-CH D-S 40V 8SOIC
SQ4850EY-T1-GE3 MOSFET N-CH D-S 60V 8SOIC
SQ4936EY-T1-GE3 MOSFET DUAL N-CH 30V 7A 8SOIC
SQ4942EY-T1-GE3 MOSFET DUAL N-CH 40V 8SOIC
SQ7414EN-T1-E3 MOSFET N-CH 60V 5.6A PPAK 1212-8
SQ7415EN-T1-E3 MOSFET P-CH 60V 3.6A PPAK 1212-8
SQD15N06-42L-GE3 MOSFET N-CH 60V 15A TO252
相关代理商/技术参数
SQ4424 制造商:Ssac 功能描述:
SQ4425EY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 30 V (D-S) 175 ?°C MOSFET
SQ4425EY-T1-GE3 制造商:Vishay Semiconductors 功能描述:
SQ4431EY-T1-GE3 功能描述:MOSFET 30V 10.8A 6W P-Ch Automotive RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SQ4434 制造商:Ssac 功能描述:
SQ4435EY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive P-Channel 30 V (D-S) 175 ?°C MOSFET
SQ4435EY-T1-GE3 制造商:Vishay Intertechnologies 功能描述:AUTOMOTIVE P-CHANNEL 30 V (D-S) 175 C MOSFET
SQ4470EY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Automotive N-Channel 60 V (D-S) 175 ?°C MOSFET